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  • High performance SiC field effect transistor: UF3C065030K3S
    High performance SiC field effect transistor: UF3C065030K3S

    UnitedSiC UF3C065030K3S is a third-generation silicon-carbon (SiC) MOSFET produced by United Silicon Carbide (UnitedSiC). The device uses SiC material, which has higher switching speed, high temperature resistance and lower conduction loss compared to traditional silicon (Si)-based materials.

    Dec 19,2024 93
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